类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 反馈上限-最大值 (Crss) | 电容-输入 | 辐射硬化 | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IRF7328PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 8A | 2 | -55°C~150°C TJ | Tube | 2010 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 鸥翼 | 未说明 | 未说明 | IRF7328PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 2675pF @ 25V | 78nC @ 10V | 30V | MS-012AA | 8A | 0.021Ohm | 32A | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | IRF7317PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6.6A 5.3A | -55°C~150°C TJ | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7317PBF | 2W | N and P-Channel | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 900pF @ 15V | 27nC @ 4.5V | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7306PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.6A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 未说明 | 未说明 | IRF7306PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 440pF @ 25V | 25nC @ 10V | 30V | MS-012AA | 3.6A | 0.1Ohm | 14A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | IRFH4257DTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 28W | 未说明 | 未说明 | 2 | Dual | 12 ns | 25W 28W | 2 N-Channel (Dual) | 3.4m Ω @ 25A, 10V | 2.1V @ 35μA | 1321pF @ 13V | 15nC @ 4.5V | 51ns | 25V | 25 ns | 25A | 20V | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
AON6980 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 8-DFN (5x6) | 18A 27A | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | SRFET™ | 活跃 | 1 (Unlimited) | 150°C | -55°C | 4.1W | 3.5W 4.1W | 2 N-Channel (Half Bridge) | 6.8mOhm @ 20A, 10V | 2.2V @ 250μA | 1095pF @ 15V | 22nC @ 10V | 30V | 27A | 1.095nF | 逻辑电平门 | 6.8 mΩ | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SSM6N37FE,LM(T | Toshiba | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 150mW | 2014 | yes | 活跃 | unknown | 20V | 250mA | 2.2 Ω | 12pF | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8M5TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6A 7A | 2 | 150°C TJ | Tape & Reel (TR) | 2004 | e2 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 2W | DUAL | 鸥翼 | 260 | 6A | 10 | *M5 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 7.2nC @ 5V | 50ns | 30V | N-CHANNEL AND P-CHANNEL | 7A | 6A | 0.047Ohm | 24A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
FDC6036P_F077 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 | 5A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 900mW | 2 P-Channel (Dual) | 44mOhm @ 5A, 4.5V | 1.5V @ 250μA | 992pF @ 10V | 14nC @ 4.5V | 20V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD114813SCL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 16-SOIC | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 4 N-Channel, Matched Pair | 500Ohm @ 2.7V | 1.26V @ 1μA | 2.5pF @ 5V | 10.6V | 3mA | 10.6V | 10V | 2.5pF | 耗尽模式 | 500Ohm | 500 Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3660S-F121 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-PowerTDFN | 13A 30A | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 1W | 2 N-Channel (Dual) Asymmetrical | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 1765pF @ 15V | 29nC @ 10V | 30V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SI9936DY,518 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5A | 2 | 150°C TJ | Tape & Reel (TR) | 1997 | TrenchMOS™ | e4 | Obsolete | 2 (1 Year) | 8 | EAR99 | 镍钯金 | 鸥翼 | SI9936 | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 5A, 10V | 1V @ 250μA | 35nC @ 10V | 30V | MS-012AA | 5A | 0.05Ohm | 40A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
TPCL4203(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 4-XFLGA | 4 | 150°C TJ | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 500mW | 2 N-Channel (Half Bridge) | 1.2V @ 200μA | 685pF @ 10V | 85ns | 210 ns | 12V | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN61D8LVT-13 | Diodes Incorporated | 数据表 | 13910 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 820mW | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 820mW | 2 N-Channel (Dual) | SWITCHING | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 12.9pF @ 12V | 0.74nC @ 5V | 60V | 630mA | 0.63A | 2.4Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
BSL806NL6327HTSA1 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 | 2.3A | -55°C~150°C TJ | Tape & Reel (TR) | OptiMOS™ | Obsolete | 1 (Unlimited) | 500mW | 2 N-Channel (Dual) | 57mOhm @ 2.3A, 2.5V | 750mV @ 11μA | 259pF @ 10V | 1.7nC @ 2.5V | 20V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3016LNS-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 21 Weeks | 表面贴装 | 8-PowerVDFN | 9A Ta 6.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 260 | 30 | 1.3W Ta | N and P-Channel Complementary | 16m Ω @ 7A, 10V, 28m Ω @ 7A, 10V | 2V @ 250μA | 1184pF @ 15V 1188pF @ 15V | 9.5nC @ 4.5V | 30V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDF3N04HDR2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 2 weeks ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 15 ns | 3.4A | Cut Tape (CT) | 2006 | e0 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -55°C | LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED | 40V | 1.39W | 鸥翼 | 240 | not_compliant | 3A | 30 | MMDF3N04HD | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 80m Ω @ 3.4A, 10V | 3V @ 250μA | 900pF @ 32V | 28nC @ 10V | 15ns | 19 ns | 3A | 20V | 3.4A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 96 pF | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||
NDC7002N_SB9G007 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 510mA | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 700mW | 2 N-Channel (Dual) | 2Ohm @ 510mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 1nC @ 10V | 50V | 逻辑电平门 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | 8-SOP (5.5x6.0) | 5A | 150°C TJ | Digi-Reel® | 2003 | Discontinued | 1 (Unlimited) | 20V | 450mW | 5A | TPC*208 | 450mW | 2 N-Channel (Dual) | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 780pF @ 10V | 9.5nC @ 5V | 5ns | 20V | 5A | 780pF | 逻辑电平门 | 50 mΩ | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6303N_D87Z | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) | 500mA | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 300mW | 2 N-Channel (Dual) | 450mOhm @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 25V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS3C2F100 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 33 ns | 150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 100V | 2W | DUAL | 鸥翼 | 260 | 3A | 30 | STS3D | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 145m Ω @ 1.5A, 10V | 2V @ 250μA | 460pF @ 25V | 20nC @ 10V | 20ns | N-CHANNEL AND P-CHANNEL | 7.5 ns | 3A | 20V | 3A | 0.145Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | VMK90-02T2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Chassis Mount, Screw | 底座安装 | TO-240AA | 7 | SILICON | 2 | 200 ns | -40°C~150°C TJ | Bulk | 2000 | e1 | yes | Obsolete | 1 (Unlimited) | 7 | EAR99 | 25MOhm | Tin/Silver/Copper (Sn/Ag/Cu) | 380W | UPPER | UNSPECIFIED | 未说明 | 未说明 | 7 | 不合格 | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 380W | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 500mA, 10V | 4V @ 3mA | 15000pF @ 25V | 450nC @ 10V | 80ns | 200V | 100 ns | 83A | 20V | 84A | 200V | 330A | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||
UPA1981TE-T1-A | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | SILICON | 2 | 150°C | 2004 | e6 | yes | Obsolete | 3 (168 Hours) | 6 | EAR99 | 锡铋 | DUAL | 鸥翼 | 未说明 | 未说明 | 6 | R-PDSO-G6 | 不合格 | COMPLEX | 增强型MOSFET | SWITCHING | N-CHANNEL AND P-CHANNEL | 2.8A | 0.07Ohm | METAL-OXIDE SEMICONDUCTOR | 1W | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSO4804HUMA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8A Ta | -55°C~150°C | Tape & Reel (TR) | 2017 | Obsolete | 1 (Unlimited) | 2W | 2 N-Channel (Dual) | 20m Ω @ 8A, 10V | 2V @ 30μA | 870pF @ 25V | 17nC @ 5V | 30V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMD6N03R2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 超低电阻 | 1.29W | 鸥翼 | 260 | 30 | NTMD6N03 | AEC-Q101 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 950pF @ 24V | 30nC @ 10V | 30V | 6A | 20V | 6A | 0.032Ohm | 30A | 30V | 325 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
![]() | IXTL2X200N085T | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | ISOPLUSi5-Pak™ | 5 | SILICON | 2 | 65 ns | -55°C~175°C TJ | Tube | 2007 | TrenchMV™ | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | 150W | SINGLE | 未说明 | 未说明 | 5 | 不合格 | COMPLEX | 增强型MOSFET | 150W | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 6m Ω @ 50A, 10V | 4V @ 250μA | 7600pF @ 25V | 152nC @ 10V | 80ns | 85V | 64 ns | 112A | 0.006Ohm | 85V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 |
IRF7328PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7317PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7306PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRFH4257DTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
AON6980
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N37FE,LM(T
Toshiba
分类:Transistors - FETs, MOSFETs - Arrays
SP8M5TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDC6036P_F077
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
ALD114813SCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FDMS3660S-F121
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SI9936DY,518
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
TPCL4203(TE85L,F)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
DMN61D8LVT-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
4.831577
BSL806NL6327HTSA1
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
DMC3016LNS-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
MMDF3N04HDR2
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NDC7002N_SB9G007
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
FDG6303N_D87Z
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
STS3C2F100
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
VMK90-02T2
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
UPA1981TE-T1-A
Renesas Electronics America
分类:Transistors - FETs, MOSFETs - Arrays
BSO4804HUMA2
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
NVMD6N03R2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IXTL2X200N085T
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
